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| PROFET(R) BTS 425 L1 Smart Highside Power Switch Features * Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 43 V 5.0 ... 24 V 60 m 7.0 A 17 A TO-220AB/5 5 1 Straight leads 5 5 1 Application Standard SMD * C compatible power switch with diagnostic feedback for 12 V DC grounded loads * Most suitable for resistive and lamp loads General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS(R) technology. Fully protected by embedded protection functions. + V bb 3 Voltage source Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Rectifier ESD Logic Open load Short to Vbb detection R O OUT 2 IN Temperature sensor 5 Load 4 ST GND (R) PROFET Load GND GND 1 Signal GND 1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Semiconductor Group 1 02.97 BTS 425 L1 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Supply voltage for full short circuit protection Tj Start=-40 ...+150C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 1.7 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Symbol Vbb Vbb Values 43 24 60 self-limited -40 ...+150 -55 ...+150 75 1.0 2.0 -10 ... +16 2.0 5.0 Unit V V V A C W kV V mA VLoad dump4) IL Tj Tstg Ptot VESD VIN IIN IST Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): Values typ max -- 1.67 -75 34 -Unit K/W 2) 3) 4) 5) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 BTS 425 L1 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics Tj=25 C: Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 Turn-on time IN to 90% VOUT: to 10% VOUT: Turn-off time IN RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Operating Parameters Tj =-40...+150C: Operating voltage6) Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Undervoltage restart of charge pump Tj =-40...+150C: see diagram page 10 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C: Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection7) Ibb=40 mA Tj=-40...+25C: Standby current (pin 3) VIN=0 Tj= 150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150C 6) 7) 8) On-state resistance (pin 3 to 5) IL = 2 A RON -5.8 50 100 7.0 -- 60 120 -10 m IL(ISO) IL(GNDhigh) -- A mA s ton toff dV /dton -dV/dtoff 80 80 0.1 0.1 200 230 --- 400 450 1 1 V/s V/s Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) 5.0 3.5 ---24 23 -42 ----- ---5.6 0.2 --0.5 47 10 12 -1.8 24 5.0 5.0 7.0 -34 ---25 28 12 3.5 V V V V V V V V V A A mA Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 3 BTS 425 L1 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Initial peak short circuit current limit (pin 3 to 5) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 9) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 9) Reverse battery voltage drop (Vout > Vbb) IL = -2 A Tj=150 C: Diagnostic Characteristics Open load detection current (on-condition, ) IL(SCp) 27 20 12 37 30 18 17 -10 -610 47 40 25 ---32 -A IL(SCr) Tjt Tjt -Vbb -VON(rev) -150 ---A C K V mV Tj=-40 C: IL (OL) Tj=25..150C: 150 150 2 600 450 3 950 750 4 mA V Open load detection voltage10) (off-condition) VOUT(OL) Tj=-40..150C: Internal output pull down (pin 5 to 1), VOUT=5 V, Tj=-40..150C RO 4 10 30 k Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 10) External pull up resistor required for open load detection in off state. 9) Semiconductor Group 4 BTS 425 L1 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback11) Input resistance Tj=-40..150C, see circuit page 6 Input turn-on threshold voltage Tj =-40..+150C: Tj =-40..+150C: Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V, Tj =-40..+150C On state input current (pin 2), VIN = 3.5 V, Tj =-40..+150C Delay time for status with open load after switch off (see timing diagrams, page 10), Tj =-40..+150C Status invalid after positive input slope Tj=-40 ... +150C: (open load) Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: Tj =-40...+25C, IST = +1.6 mA: ST low voltage Tj = +150C, IST = +1.6 mA: RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL4) td(ST) 2.5 1.7 1.5 -1 20 100 -- 3.5 --0.5 -50 520 250 6 3.5 --50 90 1000 600 k V V V A A s s VST(high) VST(low) 5.4 --- 6.1 --- -0.4 0.6 V 11) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 5 BTS 425 L1 Truth Table Inputlevel Normal operation Open load Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H Output level L H 12) Status 425 L1 426 L1 H H H (L13)) L L14) H (L15)) H L H H H H H H H L L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 10) Terms Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON Status output +5V R ST(ON) ST GND ESDZD ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Input circuit (ESD protection) R IN I overvoltage output clamp + V bb V Z ESD-ZD I GND I I VON ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). OUT GND PROFET VON clamped to 47 V typ. 12) 13) 14) Power Transistor off, high impedance with external resistor between pin 3 and pin 5 An external short of output to Vbb, in the off state, causes an internal current from output to ground. If R GND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 15) Low resistance to V may be detected in ON-state by the no-load-detection bb Semiconductor Group 6 BTS 425 L1 GND disconnect Overvolt. and reverse batt. protection + Vbb 3 IN Vbb PROFET OUT V R IN IN RI Logic Z2 2 5 R ST ST V 4 Z1 ST GND 1 V GND PROFET GND V bb V IN V ST R GND Signal GND In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 , RST= 15 k, RI= 3.5 k typ. GND disconnect with GND pull up 3 Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb 2 IN Vbb PROFET OUT 5 4 ST GND 1 ON VON V V bb V IN ST V GND OUT If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Logic unit Open load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low R EXT OFF V OUT Logic unit Open load detection R O Signal GND Semiconductor Group 7 BTS 425 L1 Typ. transient thermal impedance chip case ZthJC = f(tp) ZthJC [K/W] 10 1 0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Typ. trans. thermal impedance chip to ambient air ZthJA = f(tp), Device on 50mm * 50mm * 1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. ZthJA [K/W] 100 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3 tp [s] Semiconductor Group 8 BTS 425 L1 Timing diagrams Figure 1a: Vbb turn on: Figure 3a: Short circuit shut down by overtempertature, reset by cooling IN IN V bb IL I L(SCp) IL(SCr) V OUT ST open drain ST t proper turn on under all conditions Heating up may require several milliseconds, depending on external conditions t Figure 2a: Switching a lamp, Figure 4a: Overtemperature: Reset if Tj IN ST ST V OUT V OUT I L t T J t Semiconductor Group 9 BTS 425 L1 Figure 5a: Open load: detection in ON-state, turn on/off to open load Figure 5c: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load IN IN ST t d(ST) t d(ST OL4) ST t d(ST) V OUT V OUT I L I L open t The status delay time td(ST OL4) allows to ditinguish between the failure modes "open load" and "overtemperature". open t Figure 6a: Undervoltage: Figure 5b: Open load: detection in ON-state, open load occurs in on-state IN IN V t d(ST OL1) ST t d(ST OL2) bb V bb(under) Vbb(u cp) Vbb(u rst) V OUT V OUT I normal L open normal ST open drain t t td(ST OL1) = 20 s typ., td(ST OL2) = 10 s typ Semiconductor Group 10 BTS 425 L1 Figure 6b: Undervoltage restart of charge pump VON(CL) V on off-state on-state V bb(over) V V V bb(u rst) bb(o rst) bb(u cp) V bb(under) V bb charge pump starts at Vbb(ucp) =5.6 V typ. Figure 7a: Overvoltage: IN Vbb V ON(CL) Vbb(over) V bb(o rst) V OUT ST off-state t Semiconductor Group 11 BTS 425 L1 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS425L1 Ordering code Q67060-S6100-A2 SMD TO-220AB/5, Opt. E3062 Ordering code BTS425L1 E3062A T&R: Q67060-S6100-A3 Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components16) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems17) with the express written approval of the Semiconductor Group of Siemens AG. TO-220AB/5, Option E3043 Ordering code BTS425L1 E3043 Q67060-S6100-A4 16) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 17) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered. Semiconductor Group 12 |
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